document number: 89390 for technical questions within your region, please contact one of the following: www.vishay.com revision: 05-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 photovoltaic solar cell protection schottky rectifier ultra low v f = 0.33 v at i f = 5.0 a VSB1545 vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? high forward surge capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in solar cell junction box as a bypass diode for protection, using dc forward current without reverse bias. mechanical data case: p600 molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end notes (1) with heatsink (2) without heatsink, free air (3) meets the requirements of iec 61 215 ed. 2 bypass di ode thermal test primary characteristics i f(av) 15 a v rrm 45 v i fsm 200 a v f at i f = 15 a 0.44 v t op max. 150 c p600 tmbs ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol VSB1545 unit device marking code v1545 maximum repetitive pe ak reverse voltage v rrm 45 v maximum average forward rectified current (fig. 1) i f(av) (1) 15 a i f(av) (2) 6 peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 200 a operating junction temperature range t op - 40 to + 150 c storage temperature range t stg - 40 to + 175 c junction temperature in dc forward current without reverse bias, t 1 h (fig. 2) t j (3) 200 c www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions wi thin your region, please contact one of the following: document number: 89390 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 05-jan-11 VSB1545 vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: 40 ms pulse width notes (1) without heatsink, free air; units mounted on pcb with 2 mm x 2 mm copper pad areas at 9.5 mm lead length (2) leads clipped at 3 mm lead length from plastic body on 7.0 cm x 2.2 cm x 1.9 cm x 2 heatsink ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - rated forward current vs. ambient temperature electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 5.0 a t a = 25 c v f (1) 0.44 - v i f = 7.5 a 0.46 - i f = 15 a 0.51 0.59 i f = 5.0 a t a = 125 c 0.33 - i f = 7.5 a 0.36 - i f = 15 a 0.44 0.54 reverse current v r = 45 v t a = 25 c i r (2) 11.6 800 a t a = 125 c 7.5 25 ma typical junction capacitance 4.0 v, 1 mhz c j 1290 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol VSB1545 unit thermal resistance r ja (1) 55 c/w r jl (1) 3.5 typical thermal resistance r jl (2) 2.5 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base qu antity delivery mode VSB1545-m3/54 1.88 54 800 13" di ameter paper tape and reel VSB1545-m3/73 1.88 73 300 ammo pack packaging am b ient temperat u re (c) dc for w ard c u rrent (a) 8 7 6 5 1 0 0 25 50 75 100 175 4 3 125 150 2 free air, without heat s ink 120 0 0 50 100 150 200 am b ient temperat u re (c) percentage of rated c u rrent (%) 100 8 0 60 40 20 25 75 125 175 dc current with heat s ink www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 89390 for technical questions within your region, please contact one of the following: www.vishay.com revision: 05-jan-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 VSB1545 vishay general semiconductor new product fig. 3 - forward power loss characteristics fig. 4 - typical instantaneous forward characteristics fig. 5 - typical reverse leakage characteristics fig. 6 - typical j unction capacitance package outline dimensions in inches (millimeters) 0 1 6 7 8 10 02 6 10 161 8 a v erage for w ard c u rrent (a) a v erage po w er loss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 12 3 4 5 2 14 4 8 9 d = t p /t t p t instantaneo u s for w ard voltage (v) 0.1 0.2 0.4 0. 8 100 10 1 0.1 t a = 150 c t a = 125 c t a = 100 c t a = 25 c 0.6 instantaneo u s for w ard c u rrent (a) 0.3 0.5 0.7 20 40 60 8 0 100 1000 100 10 1 100 000 10 000 percent of rated peak re v erse voltage (%) instantaneo u s re v erse c u rrent (a) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 100 10 000 0.1 1 10 100 re v erse voltage (v) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 1000 0.052 (1.32) 0.04 8 (1.22) 0.360 (9.1) 0.340 ( 8 .6) dia. 1.0 (25.4) mi n . 0.360 (9.1) 0.340 ( 8 .6) 1.0 (25.4) mi n . p600 www.datasheet.co.kr datasheet pdf - http://www..net/
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